uni-leipzig-open-access/json/s43246-023-00349-4

{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,7,26]],"date-time":"2023-07-26T18:16:15Z","timestamp":1690395375480},"reference-count":56,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T00:00:00Z","timestamp":1679875200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T00:00:00Z","timestamp":1679875200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"name":"Office of Fusion Energy Sciences, Office of Science, US Department of Energy"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Commun Mater"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 10<jats:sup>19<\/jats:sup>\u2009W\u2009cm<jats:sup>\u22122<\/jats:sup> and ion flux levels of up to 10<jats:sup>22<\/jats:sup>\u2009ions\u2009cm<jats:sup>\u22122<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors.<\/jats:p>","DOI":"10.1038\/s43246-023-00349-4","type":"journal-article","created":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T19:03:30Z","timestamp":1679943810000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Defect engineering of silicon with ion pulses from laser acceleration"],"prefix":"10.1038","volume":"4","author":[{"given":"Walid","family":"Redjem","sequence":"first","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-3433-2698","authenticated-orcid":false,"given":"Ariel J.","family":"Amsellem","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-0311-8624","authenticated-orcid":false,"given":"Frances I.","family":"Allen","sequence":"additional","affiliation":[]},{"given":"Gabriele","family":"Benndorf","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-6381-1394","authenticated-orcid":false,"given":"Jianhui","family":"Bin","sequence":"additional","affiliation":[]},{"given":"Stepan","family":"Bulanov","sequence":"additional","affiliation":[]},{"given":"Eric","family":"Esarey","sequence":"additional","affiliation":[]},{"given":"Leonard C.","family":"Feldman","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-1840-2553","authenticated-orcid":false,"given":"Javier","family":"Ferrer Fernandez","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-4107-4383","authenticated-orcid":false,"given":"Javier","family":"Garcia Lopez","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-3276-8781","authenticated-orcid":false,"given":"Laura","family":"Geulig","sequence":"additional","affiliation":[]},{"given":"Cameron R.","family":"Geddes","sequence":"additional","affiliation":[]},{"given":"Hussein","family":"Hijazi","sequence":"additional","affiliation":[]},{"given":"Qing","family":"Ji","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-7285-2603","authenticated-orcid":false,"given":"Vsevolod","family":"Ivanov","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-5633-4163","authenticated-orcid":false,"given":"Boubacar","family":"Kant\u00e9","sequence":"additional","affiliation":[]},{"given":"Anthony","family":"Gonsalves","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-6689-1219","authenticated-orcid":false,"given":"Jan","family":"Meijer","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-9842-7114","authenticated-orcid":false,"given":"Kei","family":"Nakamura","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-3186-8358","authenticated-orcid":false,"given":"Arun","family":"Persaud","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-8996-4249","authenticated-orcid":false,"given":"Ian","family":"Pong","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-9236-8037","authenticated-orcid":false,"given":"Lieselotte","family":"Obst-Huebl","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-6925-3995","authenticated-orcid":false,"given":"Peter A.","family":"Seidl","sequence":"additional","affiliation":[]},{"given":"Jacopo","family":"Simoni","sequence":"additional","affiliation":[]},{"given":"Carl","family":"Schroeder","sequence":"additional","affiliation":[]},{"given":"Sven","family":"Steinke","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-4724-6369","authenticated-orcid":false,"given":"Liang Z.","family":"Tan","sequence":"additional","affiliation":[]},{"given":"Ralf","family":"Wunderlich","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-0593-2195","authenticated-orcid":false,"given":"Brian","family":"Wynne","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-4046-9252","authenticated-orcid":false,"given":"Thomas","family":"Schenkel","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2023,3,27]]},"reference":[{"key":"349_CR1","unstructured":"Chang, C. Y. & Sze, S. M. ULSI Technology. (McGraw-Hill Science, Engineering & Mathematics, 1996)."},{"key":"349_CR2","doi-asserted-by":"publisher","first-page":"627","DOI":"10.1126\/science.163.3868.627","volume":"163","author":"L Eriksson","year":"1969","unstructured":"Eriksson, L., Davies, J. A. & Mayer, J. W. Ion implantation studies in silicon. Science 163, 627 (1969).","journal-title":"Science"},{"key":"349_CR3","doi-asserted-by":"crossref","unstructured":"Nastasi, M. & Mayer, J. W. Ion Implantation and Synthesis of Materials. (Springer Science & Business Media, 2007).","DOI":"10.1007\/978-3-540-45298-0"},{"key":"349_CR4","doi-asserted-by":"crossref","unstructured":"Skorupa, W., and Schmidt, H. (eds.) Sub-second annealing of advanced materials: Annealing by lasers, flash lamps and swift heavy ions. (Springer International Publishing, 2013).","DOI":"10.1007\/978-3-319-03131-6"},{"key":"349_CR5","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.physrep.2013.02.001","volume":"528","author":"MW Doherty","year":"2013","unstructured":"Doherty, M. W. et al. The nitrogen-vacancy colour centre in diamond. Phys. Rep. 528, 1 (2013).","journal-title":"Phys. Rep."},{"key":"349_CR6","doi-asserted-by":"publisher","first-page":"83","DOI":"10.1016\/0370-1573(89)90064-1","volume":"176","author":"G Davies","year":"1989","unstructured":"Davies, G. The optical properties of luminescence centres in silicon. Phys. Rep. 176, 83 (1989).","journal-title":"Phys. Rep."},{"key":"349_CR7","doi-asserted-by":"publisher","first-page":"738","DOI":"10.1038\/s41928-020-00499-0","volume":"3","author":"W Redjem","year":"2020","unstructured":"Redjem, W. et al. Single artificial atoms in silicon emitting at telecom wavelengths. Nat. Electr. 3, 738 (2020).","journal-title":"Nat. Electr."},{"key":"349_CR8","doi-asserted-by":"publisher","first-page":"083602","DOI":"10.1103\/PhysRevLett.126.083602","volume":"126","author":"A Durand","year":"2021","unstructured":"Durand, A. et al. Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon. Phys. Rev. Lett. 126, 083602 (2021).","journal-title":"Phys. Rev. Lett."},{"key":"349_CR9","doi-asserted-by":"publisher","first-page":"196402","DOI":"10.1103\/PhysRevLett.127.196402","volume":"127","author":"P Udvarhelyi","year":"2021","unstructured":"Udvarhelyi, P., Somogyi, B., Thiering, G. & Gali, A. Identification of a Telecom Wavelength Single Photon Emitter in Silicon. Phys. Rev. Lett. 127, 196402 (2021).","journal-title":"Phys. Rev. Lett."},{"key":"349_CR10","doi-asserted-by":"publisher","first-page":"020301","DOI":"10.1103\/PRXQuantum.1.020301","volume":"1","author":"L Bergeron","year":"2020","unstructured":"Bergeron, L. et al. Silicon-Integrated Telecommunications Photon-Spin Interface. PRX Quantum 1, 020301 (2020).","journal-title":"PRX Quantum"},{"key":"349_CR11","doi-asserted-by":"publisher","first-page":"012501","DOI":"10.1088\/2515-7647\/ac1ef4","volume":"4","author":"G Moody","year":"2022","unstructured":"Moody, G. et al. Roadmap on integrated quantum photonics. J. Phys. Photonics 4, 012501 (2022). 2022.","journal-title":"J. Phys. Photonics"},{"key":"349_CR12","doi-asserted-by":"publisher","first-page":"868","DOI":"10.1063\/1.1428782","volume":"73","author":"JM Poate","year":"2002","unstructured":"Poate, J. M. & Saadatmand, K. Ion beam technologies in the semiconductor world (plenary). Rev. Sci. Instrum. 73, 868 (2002).","journal-title":"Rev. Sci. Instrum."},{"key":"349_CR13","doi-asserted-by":"publisher","first-page":"187","DOI":"10.1063\/1.91819","volume":"37","author":"RT Hodgson","year":"1980","unstructured":"Hodgson, R. T., Baglin, J. E. E., Pal, R., Neri, J. M. & Hammer, D. A. Ion beam annealing of semiconductors. Appl. Phys. Lett. 37, 187 (1980).","journal-title":"Appl. Phys. Lett."},{"key":"349_CR14","doi-asserted-by":"publisher","first-page":"751","DOI":"10.1103\/RevModPhys.85.751","volume":"85","author":"A Macchi","year":"2013","unstructured":"Macchi, A., Borghesi, M. & Passoni, M. Ion acceleration by superintense laser-plasma interaction. Rev. Mod. Phys. 85, 751 (2013).","journal-title":"Rev. Mod. Phys."},{"key":"349_CR15","doi-asserted-by":"publisher","first-page":"071101","DOI":"10.1063\/1.4959198","volume":"87","author":"J Schreiber","year":"2016","unstructured":"Schreiber, J., Bolton, P. R. & Parodi, K. Invited Review Article: \u2018Hands-on\u2019 laser-driven ion acceleration: A primer for laser-driven source development and potential applications. Rev. Sci. Instrum. 87, 071101 (2016).","journal-title":"Rev. Sci. Instrum."},{"key":"349_CR16","doi-asserted-by":"publisher","first-page":"139","DOI":"10.1038\/nphys2153","volume":"8","author":"T Bartal","year":"2012","unstructured":"Bartal, T. et al. Focusing of short-pulse high-intensity laser-accelerated proton beams. Nat. Phys. 8, 139 (2012).","journal-title":"Nat. Phys."},{"key":"349_CR17","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-020-74045-5","volume":"10","author":"P Boller","year":"2020","unstructured":"Boller, P. et al. First on-line detection of radioactive fission isotopes produced by laser-accelerated protons. Sci. Rep. 10, 17183 (2020).","journal-title":"Sci. Rep."},{"key":"349_CR18","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-022-05181-3","volume":"12","author":"J Bin","year":"2022","unstructured":"Bin, J. et al. A new platform for ultra-high dose rate radiobiological research using the BELLA PW laser proton beamline. Sci. Rep. 12, 1 (2022).","journal-title":"Sci. Rep."},{"key":"349_CR19","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-017-02675-x","volume":"9","author":"M Barberio","year":"2018","unstructured":"Barberio, M. et al. Laser-accelerated particle beams for stress testing of materials. Nat. Commun. 9, 372 (2018).","journal-title":"Nat. Commun."},{"key":"349_CR20","doi-asserted-by":"publisher","DOI":"10.1038\/srep40415","volume":"7","author":"M Barberio","year":"2017","unstructured":"Barberio, M., Veltri, S., Scisci\u00f2, M. & Antici, P. Laser-Accelerated Proton Beams as Diagnostics for Cultural Heritage. Sci. Rep. 7, 40415 (2017).","journal-title":"Sci. Rep."},{"key":"349_CR21","doi-asserted-by":"publisher","first-page":"025011","DOI":"10.1088\/0741-3335\/58\/2\/025011","volume":"58","author":"L Torrisi","year":"2016","unstructured":"Torrisi, L. et al. An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas. Plasma Phys. Controll. Fusion 58, 025011 (2016).","journal-title":"Plasma Phys. Controll. Fusion"},{"key":"349_CR22","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/JQE.2017.2708601","volume":"53","author":"K Nakamura","year":"2017","unstructured":"Nakamura, K. et al. Diagnostics, control and performance parameters for the BELLA high repetition rate petawatt class laser. IEEE J. Quantum Electr. 53, 1 (2017).","journal-title":"IEEE J. Quantum Electr."},{"key":"349_CR23","doi-asserted-by":"publisher","first-page":"021302","DOI":"10.1103\/PhysRevAccelBeams.23.021302","volume":"23","author":"S Steinke","year":"2020","unstructured":"Steinke, S. et al. Acceleration of high charge ion beams with achromatic divergence by petawatt laser pulses. Phys. Rev. Accelerat. Beams 23, 021302 (2020).","journal-title":"Phys. Rev. Accelerat. Beams"},{"key":"349_CR24","doi-asserted-by":"publisher","first-page":"053301","DOI":"10.1063\/1.5086822","volume":"90","author":"JH Bin","year":"2019","unstructured":"Bin, J. H. et al. Absolute calibration of GafChromic film for very high flux laser driven ion beams. Rev. Sci. Instrum. 90, 053301 (2019).","journal-title":"Rev. Sci. Instrum."},{"key":"349_CR25","doi-asserted-by":"publisher","first-page":"542","DOI":"10.1063\/1.1333697","volume":"8","author":"SC Wilks","year":"2001","unstructured":"Wilks, S. C. et al. Energetic proton generation in ultra-intense laser\u2013solid interactions. Phys. Plasmas 8, 542 (2001).","journal-title":"Phys. Plasmas"},{"key":"349_CR26","doi-asserted-by":"publisher","first-page":"255002","DOI":"10.1103\/PhysRevLett.91.255002","volume":"91","author":"J Fuchs","year":"2003","unstructured":"Fuchs, J. et al. Spatial uniformity of laser-accelerated ultrahigh-current MeV electron propagation in metals and insulators. Phys. Rev. Lett. 91, 255002 (2003).","journal-title":"Phys. Rev. Lett."},{"key":"349_CR27","doi-asserted-by":"publisher","first-page":"085002","DOI":"10.1103\/PhysRevLett.89.085002","volume":"89","author":"M Hegelich","year":"2002","unstructured":"Hegelich, M. et al. MeV ion jets from short-pulse-laser interaction with thin foils. Phys. Rev. Lett. 89, 085002 (2002).","journal-title":"Phys. Rev. Lett."},{"key":"349_CR28","unstructured":"E. A. G. Laboratories. EAG Laboratories https:\/\/www.eag.com\/ (2016)."},{"key":"349_CR29","doi-asserted-by":"publisher","first-page":"1818","DOI":"10.1016\/j.nimb.2010.02.091","volume":"268","author":"JF Ziegler","year":"2010","unstructured":"Ziegler, J. F., Ziegler, M. D. & Biersack, J. P. SRIM \u2013 The stopping and range of ions in matter (2010). Nuclear Instr. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms 268, 1818\u20131823 (2010).","journal-title":"Nuclear Instr. Methods Phys. Res. Section B: Beam Interact. Mater. Atoms"},{"key":"349_CR30","doi-asserted-by":"publisher","first-page":"1649","DOI":"10.1088\/0741-3335\/49\/10\/004","volume":"49","author":"J Kr\u00e1sa","year":"2007","unstructured":"Kr\u00e1sa, J. et al. Temperature and centre-of-mass energy of ions emitted by laser-produced polyethylene plasma. Plasma Phys. Control. Fusion 49, 1649 (2007).","journal-title":"Plasma Phys. Control. Fusion"},{"key":"349_CR31","first-page":"6","volume":"413","author":"J Shen","year":"2017","unstructured":"Shen, J. et al. Fracture analysis of surface exfoliation on single crystal silicon irradiated by intense pulsed ion beam. Nucl. Instrum. Methods Phys. Res. B 413, 6 (2017).","journal-title":"Methods Phys. Res. B"},{"key":"349_CR32","unstructured":"Wang, Y. & Nastasi, M. Handbook of Modern Ion Beam Materials Analysis. (Materials Research Society, 2010)."},{"key":"349_CR33","doi-asserted-by":"publisher","first-page":"149071","DOI":"10.1016\/j.apsusc.2021.149071","volume":"546","author":"R Monflier","year":"2021","unstructured":"Monflier, R. et al. Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities. Appl\/ Surf. Sci. 546, 149071 (2021).","journal-title":"Appl\/ Surf. Sci."},{"key":"349_CR34","doi-asserted-by":"publisher","first-page":"465","DOI":"10.1038\/nature05340","volume":"444","author":"E Bustarret","year":"2006","unstructured":"Bustarret, E. et al. Superconductivity in doped cubic silicon. Nature 444, 465 (2006).","journal-title":"Nature"},{"key":"349_CR35","doi-asserted-by":"publisher","first-page":"3776","DOI":"10.1063\/1.1659506","volume":"41","author":"LC Feldman","year":"1970","unstructured":"Feldman, L. C. & Rodgers, J. W. Depth profiles of the lattice disorder resulting from ion bombardment of silicon single crystals. J. Appl. Phys. 41, 3776 (1970).","journal-title":"J. Appl. Phys."},{"key":"349_CR36","doi-asserted-by":"publisher","first-page":"103110","DOI":"10.1063\/1.4766390","volume":"112","author":"DD Berhanuddin","year":"2012","unstructured":"Berhanuddin, D. D. et al. Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. J. Appl. Phys. 112, 103110 (2012).","journal-title":"J. Appl. Phys."},{"key":"349_CR37","doi-asserted-by":"publisher","first-page":"13","DOI":"10.3390\/qubs6010013","volume":"6","author":"T Schenkel","year":"2022","unstructured":"Schenkel, T. et al. Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams. Quantum Beam Science 6, 13 (2022).","journal-title":"Quantum Beam Science"},{"key":"349_CR38","doi-asserted-by":"publisher","first-page":"5765","DOI":"10.1103\/PhysRevB.42.5765","volume":"42","author":"LW Song","year":"1990","unstructured":"Song, L. W., Zhan, X. D., Benson, B. W. & Watkins, G. D. Bistable interstitial-carbon\u2013substitutional-carbon pair in silicon. Phys. Rev. B 42, 5765\u20135783 (1990).","journal-title":"Phys. Rev. B"},{"key":"349_CR39","doi-asserted-by":"publisher","first-page":"2981","DOI":"10.1016\/j.physb.2011.08.029","volume":"407","author":"A Docaj","year":"2012","unstructured":"Docaj, A. & Estreicher, S. K. Three carbon pairs in Si. Physica B: Condens. Matt. 407, 2981\u20132984 (2012).","journal-title":"Physica B: Condens. Matt."},{"key":"349_CR40","doi-asserted-by":"publisher","first-page":"161421","DOI":"10.1063\/1.5010269","volume":"123","author":"D Timerkaeva","year":"2018","unstructured":"Timerkaeva, D., Attaccalite, C., Brenet, G., Caliste, D. & Pochet, P. Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles. J. Appl. Phys. 123, 161421 (2018).","journal-title":"J. Appl. Phys."},{"key":"349_CR41","doi-asserted-by":"publisher","first-page":"183509","DOI":"10.1063\/1.4875658","volume":"115","author":"H Wang","year":"2014","unstructured":"Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N. & Schwingenschl\u00f6gl, U. G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach. J. Appl. Phys. 115, 183509 (2014).","journal-title":"J. Appl. Phys."},{"key":"349_CR42","doi-asserted-by":"publisher","first-page":"045501","DOI":"10.1103\/PhysRevLett.92.045501","volume":"92","author":"DA Richie","year":"2004","unstructured":"Richie, D. A. et al. Complexity of small silicon self-interstitial defects. Phys. Rev. Lett. 92, 045501 (2004).","journal-title":"Phys. Rev. Lett."},{"key":"349_CR43","doi-asserted-by":"crossref","unstructured":"Carvalho, A., Jones, R., Coutinho, J. & Briddon, P. R. Density-functional study of small interstitial clusters in Si: Comparison with experiments. Phys. Rev. B Condens. Matter Mater. Phys. 72, 155208 (2005).","DOI":"10.1103\/PhysRevB.72.155208"},{"key":"349_CR44","doi-asserted-by":"publisher","first-page":"075109","DOI":"10.1088\/0022-3727\/49\/7\/075109","volume":"49","author":"I Santos","year":"2016","unstructured":"Santos, I., Aboy, M., L\u00f3pez, P., Marqu\u00e9s, L. A. & Pelaz, L. Insights on the atomistic origin of X and W photoluminescence lines inc-Si from ab initio simulations. J. Phys. D Appl. Phys. 49, 075109 (2016).","journal-title":"J. Phys. D Appl. Phys."},{"key":"349_CR45","doi-asserted-by":"crossref","unstructured":"Moussa, J. E. & Cohen, M. L. Constraints onTcfor superconductivity in heavily boron-doped diamond. Phys. Rev. B 77, 064518 (2008).","DOI":"10.1103\/PhysRevB.77.064518"},{"key":"349_CR46","doi-asserted-by":"publisher","first-page":"129","DOI":"10.1017\/S026303461800006X","volume":"36","author":"J Shen","year":"2018","unstructured":"Shen, J. et al. Surface exfoliation analysis on single-crystal silicon under compressed plasma flow action. Laser Part. Beams 36, 129 (2018).","journal-title":"Laser Part. Beams"},{"key":"349_CR47","doi-asserted-by":"publisher","first-page":"551","DOI":"10.1038\/s41586-020-2619-8","volume":"584","author":"AP Veps\u00e4l\u00e4inen","year":"2020","unstructured":"Veps\u00e4l\u00e4inen, A. P. et al. Impact of ionizing radiation on superconducting qubit coherence. Nature 584, 551 (2020).","journal-title":"Nature"},{"key":"349_CR48","doi-asserted-by":"publisher","DOI":"10.1038\/s41534-021-00431-0","volume":"7","author":"JM Martinis","year":"2021","unstructured":"Martinis, J. M. Saving superconducting quantum processors from decay and correlated errors generated by gamma and cosmic rays. NPJ Quantum Inform. 7, 90 (2021).","journal-title":"NPJ Quantum Inform."},{"key":"349_CR49","doi-asserted-by":"publisher","first-page":"063118","DOI":"10.1063\/1.4954242","volume":"23","author":"BH Shaw","year":"2016","unstructured":"Shaw, B. H., Steinke, S., van Tilborg, J. & Leemans, W. P. Reflectance characterization of tape-based plasma mirrors. Phys. Plasmas 23, 063118 (2016).","journal-title":"Phys. Plasmas"},{"key":"349_CR50","doi-asserted-by":"publisher","first-page":"558","DOI":"10.1103\/PhysRevB.47.558","volume":"47","author":"G Kresse","year":"1993","unstructured":"Kresse, G. & Hafner, J. Ab initiomolecular dynamics for liquid metals. Phys. Rev. B 47, 558 (1993).","journal-title":"Phys. Rev. B"},{"key":"349_CR51","doi-asserted-by":"publisher","first-page":"14251","DOI":"10.1103\/PhysRevB.49.14251","volume":"49","author":"G Kresse","year":"1994","unstructured":"Kresse, G. & Hafner, J. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. Phys. Rev. B Condens. Matter 49, 14251 (1994).","journal-title":"Phys. Rev. B Condens. Matter"},{"key":"349_CR52","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1016\/0927-0256(96)00008-0","volume":"6","author":"G Kresse","year":"1996","unstructured":"Kresse, G. & Furthm\u00fcller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15 (1996).","journal-title":"Comput. Mater. Sci."},{"key":"349_CR53","doi-asserted-by":"publisher","first-page":"11169","DOI":"10.1103\/PhysRevB.54.11169","volume":"54","author":"G Kresse","year":"1996","unstructured":"Kresse, G. & Furthm\u00fcller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B Condens. Matter 54, 11169 (1996).","journal-title":"Phys. Rev. B Condens. Matter"},{"key":"349_CR54","doi-asserted-by":"publisher","first-page":"224106","DOI":"10.1063\/1.2404663","volume":"125","author":"AV Krukau","year":"2006","unstructured":"Krukau, A. V., Vydrov, O. A., Izmaylov, A. F. & Scuseria, G. E. Influence of the exchange screening parameter on the performance of screened hybrid functionals. J. Chem. Phys. 125, 224106 (2006).","journal-title":"J. Chem. Phys."},{"key":"349_CR55","doi-asserted-by":"publisher","first-page":"2384","DOI":"10.1063\/1.439486","volume":"72","author":"HC Andersen","year":"1980","unstructured":"Andersen, H. C. Molecular dynamics simulations at constant pressure and\/or temperature. J. Chem. Phys. 72, 2384 (1980).","journal-title":"J. Chem. Phys."},{"key":"349_CR56","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","volume":"77","author":"JP Perdew","year":"1996","unstructured":"Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized Gradient Approximation Made Simple. Phys. Rev. Lett. 77, 3865 (1996).","journal-title":"Phys. Rev. Lett."}],"container-title":["Communications Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.nature.com\/articles\/s43246-023-00349-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s43246-023-00349-4","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/www.nature.com\/articles\/s43246-023-00349-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T20:04:25Z","timestamp":1679947465000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.nature.com\/articles\/s43246-023-00349-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3,27]]},"references-count":56,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2023,12]]}},"alternative-id":["349"],"URL":"http:\/\/dx.doi.org\/10.1038\/s43246-023-00349-4","relation":{},"ISSN":["2662-4443"],"issn-type":[{"value":"2662-4443","type":"electronic"}],"subject":["Mechanics of Materials","General Materials Science"],"published":{"date-parts":[[2023,3,27]]},"assertion":[{"value":"15 April 2022","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 March 2023","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 March 2023","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"22"}}