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Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 10<jats:sup>19<\/jats:sup>\u2009W\u2009cm<jats:sup>\u22122<\/jats:sup> and ion flux levels of up to 10<jats:sup>22<\/jats:sup>\u2009ions\u2009cm<jats:sup>\u22122<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. 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