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{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,7,26]],"date-time":"2023-07-26T18:16:15Z","timestamp":1690395375480},"reference-count":56,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T00:00:00Z","timestamp":1679875200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T00:00:00Z","timestamp":1679875200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"name":"Office of Fusion Energy Sciences, Office of Science, US Department of Energy"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Commun Mater"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 10<jats:sup>19<\/jats:sup>\u2009W\u2009cm<jats:sup>\u22122<\/jats:sup> and ion flux levels of up to 10<jats:sup>22<\/jats:sup>\u2009ions\u2009cm<jats:sup>\u22122<\/jats:sup> s<jats:sup>\u22121<\/jats:sup>, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors.<\/jats:p>","DOI":"10.1038\/s43246-023-00349-4","type":"journal-article","created":{"date-parts":[[2023,3,27]],"date-time":"2023-03-27T19:03:30Z","timestamp":1679943810000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Defect engineering of silicon with ion pulses from laser acceleration"],"prefix":"10.1038","volume":"4","author":[{"given":"Walid","family":"Redjem","sequence":"first","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-3433-2698","authenticated-orcid":false,"given":"Ariel J.","family":"Amsellem","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-0311-8624","authenticated-orcid":false,"given":"Frances I.","family":"Allen","sequence":"additional","affiliation":[]},{"given":"Gabriele","family":"Benndorf","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0001-6381-1394","authenticated-orcid":false,"given":"Jianhui","family":"Bin","sequence":"additional","affiliation":[]},{"given":"Stepan","family":"Bulanov","sequence":"additional","affiliation":[]},{"given":"Eric","family":"Esarey","sequence":"additional","affiliation":[]},{"given":"Leonard C.","family":"Feldman","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-1840-2553","authenticated-orcid":false,"given":"Javier","family":"Ferrer Fernandez","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0003-4107-4383","authenticated-orcid":false,"given":"Javier","family":"Garcia Lopez","sequence":"additional","affiliation":[]},{"ORCID":"http:\/\/orcid.org\/0000-0002-3276-8781","authenticated-orcid":false,"given":"Laura","family":"Geulig","sequence":"additional","affiliation":[]},{"given":"Cameron R.","family":"Geddes","sequence":"additional","affiliation":[]},{"given":"Hussein","family":"Hijazi",
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