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Different post\u2010implantation annealing conditions are explored for the optimal activation of GeV centers, namely, 900\u00a0\u00b0C 2 h, 1000\u00a0\u00b0C 10 h, 1500\u00a0\u00b0C 1 h under high vacuum, and 2000\u00a0\u00b0C 15 min at 6\u00a0GPa pressure. A systematic analysis of the relevant emission properties, including the emission intensity in saturation regime and the excited state radiative lifetime, is performed on the basis of a set of ion\u2010implanted samples, with the scope of identifying the most suitable conditions for the creation of GeV centers with optimal quantum\u2010optical emission properties. The main performance parameter adopted here to describe the excitation efficiency of GeV centers as single\u2010photon emitters is the ratio between the saturation optical excitation power and the emission intensity at saturation. 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