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{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,8,11]],"date-time":"2023-08-11T04:14:23Z","timestamp":1691727263490},"reference-count":55,"publisher":"Wiley","issue":"8","license":[{"start":{"date-parts":[[2023,6,19]],"date-time":"2023-06-19T00:00:00Z","timestamp":1687132800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000781","name":"European Research Council","doi-asserted-by":"publisher"},{"DOI":"10.13039\/100007388","name":"Compagnia di San Paolo","doi-asserted-by":"publisher"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Adv Quantum Tech"],"published-print":{"date-parts":[[2023,8]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The authors report on the characterization at the single\u2010defect level of germanium\u2010vacancy (GeV) centers in diamond produced upon Ge<jats:sup>\u2212<\/jats:sup> ion implantation and different subsequent annealing processes, with a specific focus on the effect of high\u2010pressure\u2010high\u2010temperature (HPHT) processing on their quantum\u2010optical properties. Different post\u2010implantation annealing conditions are explored for the optimal activation of GeV centers, namely, 900\u00a0\u00b0C 2 h, 1000\u00a0\u00b0C 10 h, 1500\u00a0\u00b0C 1 h under high vacuum, and 2000\u00a0\u00b0C 15 min at 6\u00a0GPa pressure. A systematic analysis of the relevant emission properties, including the emission intensity in saturation regime and the excited state radiative lifetime, is performed on the basis of a set of ion\u2010implanted samples, with the scope of identifying the most suitable conditions for the creation of GeV centers with optimal quantum\u2010optical emission properties. The main performance parameter adopted here to describe the excitation efficiency of GeV centers as single\u2010photon emitters is the ratio between the saturation optical excitation power and the emission intensity at saturation. The results show an up to eightfold emission efficiency increase in HPHT\u2010treated samples with respect to conventional annealing in vacuum conditions, suggesting a suitable thermodynamic pathway toward the repeatable fabrication of ultra\u2010bright GeV centers for single\u2010photon generation purposes.<\/jats:p>","DOI":"10.1002\/qute.202300010","type":"journal-article","created":{"date-parts":[[2023,6,20]],"date-time":"2023-06-20T04:30:29Z","timestamp":1687235429000},"source":"Crossref","is-referenced-by-count":0,"title":["Efficiency Optimization of Ge\u2010V Quantum Emitters in Single\u2010Crystal Diamond upon Ion Implantation and HPHT Annealing"],"prefix":"10.1002","volume":"6","author":[{"ORCID":"http:\/\/orcid.org\/0000-0001-6216-9256","authenticated-orcid":false,"given":"Elena","family":"Nieto Hern\u00e1ndez","sequence":"first","affiliation":[{"name":"Department of Physics University of Torino Torino 10125 Italy"},{"name":"Istituto Nazionale di Fisica Nucleare (INFN) sezione di Torino Torino 10125 Italy"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-9036-3144","authenticated-orcid":false,"given":"Elisa","family":"Redolfi","sequence":"additional","affiliation":[{"name":"Department of Physics University of Torino Torino 10125 Italy"},{"name":"Istituto Nazionale di Fisica Nucleare (INFN) sezione di Torino Torino 10125 Italy"}]},{"given":"Claudia","family":"Stella","sequence":"additional","affiliation":[{"name":"Department of Physics University of Torino Torino 10125 Italy"},{"name":"Istituto Nazionale di Ricerca Metrologica (INRiM) Torino 10135 Italy"}]},{"ORCID":"http:\/\/orcid.org\/0000-0002-8628-2592","authenticated-orcid":false,"given":"Greta","family":"Andrini","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN) sezione di Torino Torino 10125 Italy"},{"name":"Department of Electronics and Communications Politecnico di Torino Torino 10129 Italy"}]},{"ORCID":"http:\/\/orcid.org\/0000-0001-5092-5923","authenticated-orcid":fals
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