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{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,2]],"date-time":"2023-09-02T11:13:42Z","timestamp":1693653222230},"reference-count":79,"publisher":"Wiley","license":[{"start":{"date-parts":[[2023,8,31]],"date-time":"2023-08-31T00:00:00Z","timestamp":1693440000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001665","name":"Agence Nationale de la Recherche","doi-asserted-by":"publisher","award":["ANR\u201015\u2010CE24\u20100027\u201001","ANR\u201018\u2010CE47\u20100013\u201001"]},{"DOI":"10.13039\/501100015694","name":"Fondazione Cassa di Risparmio di Firenze","doi-asserted-by":"publisher","award":["2021.1508"]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Optical Materials"],"abstract":"<jats:title>Abstract<\/jats:title><jats:p>Light\u2010emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been\u00a0mostly focused on light extraction and guiding. Here the control of the electronic states of carbon\u2010related impurities (G\u2010centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18\u00a0meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This\u00a0technique can be extended to other impurities and Si\u2010based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic\u00a0circuits.<\/jats:p>","DOI":"10.1002\/adom.202301608","type":"journal-article","created":{"date-parts":[[2023,9,1]],"date-time":"2023-09-01T04:20:05Z","timestamp":1693542005000},"update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Strain Engineering of the Electronic States of Silicon\u2010Based Quantum Emitters"],"prefix":"10.1002","author":[{"given":"Andrea","family":"Ristori","sequence":"first","affiliation":[{"name":"European Laboratory for Non\u2010Linear Spectroscopy (LENS) Via N. Carrara 1 Sesto Fiorentino (FI) I\u201050019 Italy"},{"name":"Department of Physics and Astronomy University of Florence Via G. Sansone 1 Sesto Fiorentino (FI) I\u201050019 Italy"}]},{"given":"Mario","family":"Khoury","sequence":"additional","affiliation":[{"name":"Aix Marseille Univ, CNRS Universit\u00e9 de Toulon IM2NP, UMR 7334 Marseille F\u201013397 France"}]},{"given":"Marco","family":"Salvalaglio","sequence":"additional","affiliation":[{"name":"Institute of Scientific Computing TU Dresden 01062 Dresden Germany"},{"name":"Dresden Center for Intelligent Materials (DCIM) TU Dresden 01062 Dresden Germany"}]},{"ORCID":"http:\/\/orcid.org\/0000-0003-0311-1745","authenticated-orcid":false,"given":"Angelos","family":"Filippatos","sequence":"additional","affiliation":[{"name":"Dresden Center for Intelligent Materials (DCIM) TU Dresden 01062 Dresden Germany"},{"name":"Department of Mechanical Engineering & Aeronautics University of Patras Patras GR\u201026504 Greece"}]},{"given":"Michele","family":"Amato","sequence":"additional","affiliation":[{"name":"Laboratoire de Physique des Solides Universit\u00e9 Paris\u2010Saclay CNRS, Orsay Paris 91405 France"}]},{"given":"Tobias","family":"Herzig","sequence":"additional","affiliation":[{"
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